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  Datasheet File OCR Text:
 Equivalent circuit
C
Darlington
sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
2SD2557
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=-0.5A VCB=10V, f=1MHz 2SD2557 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V pF
20.0min 4.0max
B
(3.2k)(450) E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
(Ta=25C) Unit
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A
mA V
19.90.3
4.0
a b
o3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
5
IB = 1 .0
2 m 50 A
VCE( sat ) - IB Characteristics (Typical)
I C - V BE Temperature Characteristics (Typical)
5 (VCE=4V)
A
50
mA
10 mA
4 Collector Current I C (A)
3
1 .2 m
A
Collector Current I C (A)
2.5
mA
4
3
em p) mp)
(Cas 25C
(C
A 0 .3 m
1
1
0
0
2
4
6
0
0
1
-30C (C
12
5C
ase Tem
2
2
as
eT
e Te
p)
0 .6 m
A
2
2.5
Collector-Emitter Voltage V C E( V)
Base-Emittor Voltage V B E( V)
h FE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
(VCE=5V) 8000 5000 D C Cur r ent Gai n h F E
C 125 C 25
-30 C
j- a( C/W)
j-a - t Characteristics
5.0
1000 500
Transient Thermal Resistance
100 50
1.0
0.5 0.3
10 5 0.02
0.1
0.5
1
5
1
5
10
50 100 Time t(ms)
500 1000 2000
Collector Current I C( A)
fT - IE Characteristics (Typical)
30
Safe Operating Area (Single Pulse)
70
P c - T a Derating
10 Collect or Cur ren t I C( A) 5
10
10 m 50 s m s 0m s
Ma xim um Powe r Dissipat io n P C( W)
1m s
60
W
50
ith In fin ite
40
he at
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300
si nk
30
20
10 Without Heatsink 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
156


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